Rigorous mathematical calculation of p- and n-mobility as functions of mechanical stress, electric field, current direction and substrate indices for scaled CMOS designing

For quantitative understanding of mobility, scattering rate and effective mass in an anisotropic system of strained/unstrained silicon and germanium, we have developed a rigorous physical equation of Schrodinger base wave functions. Using the tool, we have first quantitatively demonstrated p- and n-mobility characteristics as functions of mechanical stress, electric field, current direction and substrate indices.