• DocumentCode
    160945
  • Title

    Ultralow operating energy of directly modulated DFB laser on SiO2/Si substrate

  • Author

    Matsuo, Shoichiro ; Fujii, Teruya ; Hasebe, Koichi ; Takeda, Kenji ; Sato, Takao ; Kakitsuka, Takaaki

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2014
  • fDate
    21-25 Sept. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We successfully reduce the operating energy of a DFB laser for use in datacom applications. Since the optical confinement factor is increased by integrating the device on SiO2/Si substrate, the device exhibits 171-fJ/bit energy cost when modulating 25.8-Gbit/s NRZ signal.
  • Keywords
    distributed feedback lasers; optical communication equipment; optical modulation; semiconductor lasers; NRZ signal; Si; SiO2-Si; SiO2/Si substrate; bit rate 25.8 Gbit/s; datacom applications; directly modulated DFB laser; optical confinement factor; ultralow operating energy; Indium phosphide; Modulation; Silicon; Substrates; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication (ECOC), 2014 European Conference on
  • Conference_Location
    Cannes
  • Type

    conf

  • DOI
    10.1109/ECOC.2014.6963830
  • Filename
    6963830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=160945