DocumentCode :
160945
Title :
Ultralow operating energy of directly modulated DFB laser on SiO2/Si substrate
Author :
Matsuo, Shoichiro ; Fujii, Teruya ; Hasebe, Koichi ; Takeda, Kenji ; Sato, Takao ; Kakitsuka, Takaaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear :
2014
fDate :
21-25 Sept. 2014
Firstpage :
1
Lastpage :
3
Abstract :
We successfully reduce the operating energy of a DFB laser for use in datacom applications. Since the optical confinement factor is increased by integrating the device on SiO2/Si substrate, the device exhibits 171-fJ/bit energy cost when modulating 25.8-Gbit/s NRZ signal.
Keywords :
distributed feedback lasers; optical communication equipment; optical modulation; semiconductor lasers; NRZ signal; Si; SiO2-Si; SiO2/Si substrate; bit rate 25.8 Gbit/s; datacom applications; directly modulated DFB laser; optical confinement factor; ultralow operating energy; Indium phosphide; Modulation; Silicon; Substrates; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication (ECOC), 2014 European Conference on
Conference_Location :
Cannes
Type :
conf
DOI :
10.1109/ECOC.2014.6963830
Filename :
6963830
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=160945
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