• DocumentCode
    1609475
  • Title

    Direct measurement of barrier height at the HfO2/poly-Si interface: Band structure and local effects

  • Author

    Pantisano, Luigi ; Chen, P.J. ; Afanas´ev, V. ; Ragnarsson, L.k. ; Pourtois, G. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2004
  • Firstpage
    122
  • Lastpage
    123
  • Abstract
    In this study comprehensive experimental measurements together with a physical picture demonstrate that, regardless of poly-Si doping, the defects creation in the dielectric close to the poly-Si/HfO2 interface is responsible for the observed effective WF change. These defects are amphoteric and spatially nonuniformly distributed.
  • Keywords
    MOSFET; band structure; hafnium compounds; interface states; semiconductor device measurement; silicon; HfO2-Si; HfO2/poly-Si interface; band structure; barrier height; Capacitance-voltage characteristics; Current measurement; Dielectric materials; Dielectric measurements; Electrodes; Electrons; Hafnium oxide; Instruments; MOS devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345429
  • Filename
    1345429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609475