SIMS depth profile characterisation of InAlN/GaN structures

This contribution reports on properties and characterization of InAlN/GaN structures prepared by metal organic chemical vapour deposition (MOCVD) using secondary ion mass spectroscopy (SIMS). The SIMS revealed the vertical cross section of the InAlN/GaN sample structures on SiC substrate and also visualizes the different growth procedure results. The SIMS comparison of the structures shows the Al, In and Si incorporation to the neighbouring layers and has influence on the in-plane stress in AlN layer and measured electrical properties of the fabricated HEMT devices.