DocumentCode :
1609501
Title :
Physics-based modeling of electromagnetic parasitic effects in interconnects and busbars
Author :
Wachutka, Gerhard ; Böhm, Peter
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
fYear :
2010
Firstpage :
313
Lastpage :
316
Abstract :
The 3D-simulation of electromagnetic fields and current flow in real-life interconnect structures enables the detailed analysis of parasitic inductive effects and, thus, provides the basis for the optimization of bus bars in high power modules.
Keywords :
busbars; electromagnetic fields; interconnections; busbars; electromagnetic fields; electromagnetic parasitic effects; high power modules; interconnect structures; parasitic inductive effects; physics-based modeling; Current density; Current distribution; Electric potential; Inductance; Mathematical model; Transient analysis; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
Type :
conf
DOI :
10.1109/ASDAM.2010.5666364
Filename :
5666364
Link To Document :
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