• DocumentCode
    1609536
  • Title

    Development of highly robust nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs

  • Author

    Kil, Deok-Sin ; Hong, Kwon ; Lee, Kee-Jeung ; Kim, Joosung ; Song, Han-Sang ; Park, Ki-Seon ; Roh, Jae-Sung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook

  • Author_Institution
    Memory R&D Div., Hynix Semicond. Inc., Kyoungki-do, South Korea
  • fYear
    2004
  • Firstpage
    126
  • Lastpage
    127
  • Abstract
    TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO2 and Al2O3TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of 1 fA/cell.
  • Keywords
    DRAM chips; MOS capacitors; aluminium compounds; atomic layer deposition; hafnium compounds; leakage currents; nanostructured materials; thermal stability; titanium compounds; 11 Å; 65 nm; 65nm generation DRAMs; 700 degC; Atomic Layer Deposition; TiN-HfxAlyOz-TiN; TiN/HfxAlyOz/TiN capacitor; highly robust nano-mixed HfxAlyOz dielectrics; leakage current degradation; thermal stability; Capacitors; Dielectric devices; Dielectric thin films; Hafnium; Leakage current; Nanoscale devices; Random access memory; Robustness; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345432
  • Filename
    1345432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609536