Title :
Development of highly robust nano-mixed HfxAlyOz dielectrics for TiN/HfxAlyOz/TiN capacitor applicable to 65nm generation DRAMs
Author :
Kil, Deok-Sin ; Hong, Kwon ; Lee, Kee-Jeung ; Kim, Joosung ; Song, Han-Sang ; Park, Ki-Seon ; Roh, Jae-Sung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook
Author_Institution :
Memory R&D Div., Hynix Semicond. Inc., Kyoungki-do, South Korea
Abstract :
TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO2 and Al2O3TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of 1 fA/cell.
Keywords :
DRAM chips; MOS capacitors; aluminium compounds; atomic layer deposition; hafnium compounds; leakage currents; nanostructured materials; thermal stability; titanium compounds; 11 Å; 65 nm; 65nm generation DRAMs; 700 degC; Atomic Layer Deposition; TiN-HfxAlyOz-TiN; TiN/HfxAlyOz/TiN capacitor; highly robust nano-mixed HfxAlyOz dielectrics; leakage current degradation; thermal stability; Capacitors; Dielectric devices; Dielectric thin films; Hafnium; Leakage current; Nanoscale devices; Random access memory; Robustness; Sputtering; Tin;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345432
