Title :
Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond
Author :
Lee, C.-H. ; Yoon, J.M. ; Lee, C. ; Yang, H.M. ; Kim, K.N. ; Kim, T.Y. ; Kang, H.S. ; Ahn, Y.J. ; Park, Donggun ; Kinam Kim
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co., Yongin, South Korea
Abstract :
In this paper, a highly manufacturable 512M FinFET DRAM with novel body tied FinFET cell array transistor on bulk Si substrate has been successfully integrated and the characteristics were compared with RCAT (Recess Channel Array Transistor) and planar cell array transistor DRAM for the first time. We also propose the NWL (Negative Word Line) scheme with low channel doping body tied FinFET for a highly manufacturable FinFET DRAM for sub 60nm technology node.
Keywords :
DRAM chips; VLSI; nanotechnology; 512 Mbit; 60 nm; Recess Channel Array Transistor; body tied FinFET cell array transistor DRAM; negative word line operation; planar cell array transistor DRAM; sub 60nm technology; sub 60nm technology node; Boron; Capacitors; Doping; FinFETs; MOSFETs; Oxidation; Pulp manufacturing; Random access memory; Threshold voltage; Transistors;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345434
