Title :
Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications
Author :
Alsubaie, B.F. ; BenSaleh, Mohammed S. ; Alatawi, A.A. ; He, Liang ; Kou, Xufeng ; Yu, Xinxin ; Wang, Kang L. ; Guan Huang ; Faxian Xiu
Author_Institution :
King Abdulaziz City for Sci. & Technol., Riyadh, Saudi Arabia
Abstract :
We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure was also realized and strong photoluminescence spectra at 1200nm were observed at 80K.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanostructured materials; optoelectronic devices; photoluminescence; silicon; GaAs-InAs-GaAs; GaAs-Si; Si; hexagonal shaped crystal; low-energy {011} planes; molecular beam epitaxy; optoelectronics applications; photoluminescence spectra; rectangular shaped crystal; selectively-grown III-V compound semiconductor microstructure; selectively-grown III-V compound semiconductor nanostructure; silicon; silicon substrates; silicon-dioxide-masked nanoholes; single-crystalline nature; temperature 80 K; wavelength 1200 nm; Gallium arsenide; Photoluminescence; Quantum dot lasers; Silicon; Substrates; Surface morphology; GaAs; epitaxial growth; nanostructure; photoluminescence;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-0068-2
Electronic_ISBN :
978-1-4577-0067-5
DOI :
10.1109/SIECPC.2011.5876906
