DocumentCode
1609780
Title
Reliability characterization of a Ferroelectric Random Access Memory embedded within 130nm CMOS
Author
Rodriguez, J.A. ; Remack, K.A. ; Gertas, J. ; Boku, K. ; Udayakumar, K.R. ; Summerfelt, S.R. ; Shinn, G. ; Haider, A. ; Madan, S. ; McAdams, H. ; Moise, T.S. ; Bailey, R. ; Eliason, J. ; Depner, M. ; Kim, D. ; Staubs, P.
Author_Institution
Texas Instruments Inc., Dallas, 75243 USA
Volume
1
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates 10 year, 85??C operating life. No fails were observed with full-chip endurance test to 108 cycles followed by 1,000 hours of data retention bake at 125??C. Robust process reliability is demonstrated with no fails at 125??C operating life test.
Keywords
CMOS process; Capacitors; Copper; Degradation; Dielectric measurements; Ferroelectric materials; Random access memory; Stress measurement; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693960
Filename
4693960
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