Title :
Significant role of cold carriers for dielectric breakdown in HfSiON
Author :
Hirano, I. ; Yamaguchi, T. ; Sekine, K. ; Takayanagi, M. ; Eguchi, K. ; Tsunashima, Y. ; Satake, H.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
Dielectric breakdown mechanisms in HfSiON were thoroughly investigated by utilizing the substrate hot carrier injection. It was found that the total hole fluence (Qp) dose not dominate the breakdown in HfSiON. Furthermore, it was experimentally clarified that the injected electrons into HfSiON have the significant role for the breakdown, irrespective of their potential energy. This result strongly suggests that the roles of injected cold electrons in HfSiON are remarkably different from those in SiO2 and SiON.
Keywords :
VLSI; carrier density; carrier mobility; dielectric thin films; electric breakdown; hafnium compounds; semiconductor-insulator boundaries; silicon compounds; HfSiON; cold carriers; dielectric breakdown; potential energy; substrate hot carrier injection; total hole fluence; Charge carrier processes; Dielectric breakdown; Dielectric measurements; Dielectric substrates; Electric breakdown; Hot carrier injection; Hot carriers; Large scale integration; Potential energy; Substrate hot electron injection;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345441
