Significant role of cold carriers for dielectric breakdown in HfSiON

Author

Hirano, I. ; Yamaguchi, T. ; Sekine, K. ; Takayanagi, M. ; Eguchi, K. ; Tsunashima, Y. ; Satake, H.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan

fYear

2004

Firstpage

142

Lastpage

143

Abstract

Dielectric breakdown mechanisms in HfSiON were thoroughly investigated by utilizing the substrate hot carrier injection. It was found that the total hole fluence (Q_p) dose not dominate the breakdown in HfSiON. Furthermore, it was experimentally clarified that the injected electrons into HfSiON have the significant role for the breakdown, irrespective of their potential energy. This result strongly suggests that the roles of injected cold electrons in HfSiON are remarkably different from those in SiO₂ and SiON.

Keywords

VLSI; carrier density; carrier mobility; dielectric thin films; electric breakdown; hafnium compounds; semiconductor-insulator boundaries; silicon compounds; HfSiON; cold carriers; dielectric breakdown; potential energy; substrate hot carrier injection; total hole fluence; Charge carrier processes; Dielectric breakdown; Dielectric measurements; Dielectric substrates; Electric breakdown; Hot carrier injection; Hot carriers; Large scale integration; Potential energy; Substrate hot electron injection;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345441

Filename

1345441