Title :
New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor
Author :
Nagel, N. ; Bruchhaus, R. ; Hornik, K. ; Egger, U. ; Zhuang, H. ; Joachim, H.-O. ; Röhr, T. ; Beitel, G. ; Ozaki, T. ; Kunishima, I.
Author_Institution :
FeRAM Dev. Alliance, Yokohama, Japan
Abstract :
There is a considerable interest in ferroelectric random access memories (FeRAMs), because they combine non volatility with fast access time and low operation voltage. However, current FeRAMs still have a large cell size compared to DRAM or Flash. To develop a small and competitive FeRAM cell is the most challenging issue for a high density and stand-alone memory. In this work we demonstrate a novel Chain FeRAM cell using a new 3 dimensional Vertical Capacitor concept for the first time.
Keywords :
ferroelectric capacitors; ferroelectric storage; random-access storage; ferroelectric random access memories; vertical capacitor; Capacitors; Crystallization; Electrodes; Etching; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Plugs; Polarization; Random access memory;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345444
