DocumentCode
1609903
Title
Highly reliable and mass-productive FRAM embedded smartcard using advanced integration technologies
Author
Joo, H.J. ; Song, Y.J. ; Kim, Kinam ; Kang, S.K. ; Park, J.H. ; Kang, Y.M. ; Kang, E.Y. ; Lee, S.Y. ; Jeong, H.S. ; Kinam Kim
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
fYear
2004
Firstpage
148
Lastpage
149
Abstract
We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.
Keywords
EPROM; SRAM chips; ferroelectric storage; advanced integration technologies; capacitor technology; data memories; mass-productive FRAM embedded smartcard; multi-level encapsulating barrier layer; read/write cycle time; CMOS logic circuits; CMOS technology; Capacitors; EPROM; Ferroelectric films; Ferroelectric materials; Hydrogen; Metallization; Nonvolatile memory; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345445
Filename
1345445
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