DocumentCode :
1609982
Title :
Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/
Author :
Yokoi, Hiroshi ; Mizumoto, Tetsuya
Author_Institution :
Tokyo Institute of Technology
fYear :
1998
Firstpage :
336
Lastpage :
336
Keywords :
Etching; Temperature; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 1998. 1998 CLEO/Europe. Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-4233X
Type :
conf
DOI :
10.1109/CLEOE.1998.719515
Filename :
719515
Link To Document :
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