Parabolic negative magnetoresistance in two-dimensional electron gas in InGaAs/InP

Author

Podor, B. ; Remenyi, G.

Author_Institution

Inst. of Microelectron. & Technol., Budapest Tech, Budapest, Hungary

fYear

2008

Firstpage

195

Lastpage

200

Abstract

We have measured the magnetoresistance of two-dimensional electron gas in modulation-doped In_0.53Ga_0.47As/InP heterostructures in the temperature range from 40 mK to 4.2 K. In magnetic fields less than about 1 T and before the onset of Shubnikov-de Haas oscillations a large negative magnetoresistance was observed, which followed a quadratic dependence on the magnetic field. The observed negative magnetoresistance can be explained in terms of electron-electron interaction in two-dimension.

Keywords

III-V semiconductors; Shubnikov-de Haas effect; exchange interactions (electron); gallium arsenide; indium compounds; magnetoresistance; semiconductor heterojunctions; two-dimensional electron gas; In_0.53Ga_0.47As-InP; Shubnikov-de Haas oscillations; electron-electron interaction; modulation-doped heterostructures; parabolic negative magnetoresistance; temperature 40 mK to 4.2 K; two-dimensional electron gas; Charge carrier processes; Electrons; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Magnetic field measurement; Magnetic fields; Magnetoresistance; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on

Conference_Location

Budapest

Print_ISBN

978-1-4244-3972-0

Electronic_ISBN

978-1-4244-3974-4

Type

conf

DOI

10.1109/ISSE.2008.5276542

Filename

5276542