Title :
Parabolic negative magnetoresistance in two-dimensional electron gas in InGaAs/InP
Author :
Podor, B. ; Remenyi, G.
Author_Institution :
Inst. of Microelectron. & Technol., Budapest Tech, Budapest, Hungary
Abstract :
We have measured the magnetoresistance of two-dimensional electron gas in modulation-doped In0.53Ga0.47As/InP heterostructures in the temperature range from 40 mK to 4.2 K. In magnetic fields less than about 1 T and before the onset of Shubnikov-de Haas oscillations a large negative magnetoresistance was observed, which followed a quadratic dependence on the magnetic field. The observed negative magnetoresistance can be explained in terms of electron-electron interaction in two-dimension.
Keywords :
III-V semiconductors; Shubnikov-de Haas effect; exchange interactions (electron); gallium arsenide; indium compounds; magnetoresistance; semiconductor heterojunctions; two-dimensional electron gas; In0.53Ga0.47As-InP; Shubnikov-de Haas oscillations; electron-electron interaction; modulation-doped heterostructures; parabolic negative magnetoresistance; temperature 40 mK to 4.2 K; two-dimensional electron gas; Charge carrier processes; Electrons; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Magnetic field measurement; Magnetic fields; Magnetoresistance; Temperature dependence; Temperature distribution;
Conference_Titel :
Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
Conference_Location :
Budapest
Print_ISBN :
978-1-4244-3972-0
Electronic_ISBN :
978-1-4244-3974-4
DOI :
10.1109/ISSE.2008.5276542
