Title :
Novel fabrication process to realize ultra-thin (EOT = 0.7nm) and ultra-low leakage SiON gate dielectrics
Author :
Matsushita, D. ; Muraoka, K. ; Nakasaki, Y. ; Kato, K. ; Inumiya, S. ; Eguchi, K. ; Takayanagi, M.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We achieved 0.73 nm EOT, 88 A/cm2 Jg, and 92% Gm of that for SiO2 by just oxidation of SiN films. In addition, we achieved further improvement of EOT-Jg characteristics by re-nitridation process with minimum degradation of Gm. EOT of 0.70 nm and Jg as 95 A/cm2 is realized with superior suppression of boron penetration (ΔVth=0.04 V).
Keywords :
dielectric thin films; electric breakdown; leakage currents; nanotechnology; oxidation; permittivity; silicon compounds; SiN films; SiO2; SiON; fabrication process; oxidation; re-nitridation process; ultra-low leakage SiON gate dielectrics; ultra-thin; Atomic measurements; Bonding; Chemicals; Degradation; Fabrication; High-K gate dielectrics; Oxidation; Rough surfaces; Silicon compounds; Temperature;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345462
