DocumentCode :
1610458
Title :
Influence of Dissipation Processes on the Dispersion and Instability of the Drift Waves in Semiconductor Superlattice
Author :
Shramkova, O.V. ; Bulgakov, A.A.
Author_Institution :
Nat. Acad. of Sci. of Ukraine, Kharkov
fYear :
2006
Firstpage :
885
Lastpage :
888
Abstract :
The effect of carrier collisions on dispersion dependences and instabilities of drift waves in multilayered periodic semiconductor structure placed into external electrical field is considered in the work. It is supposed that the drift of different sign carriers under the influence of electrical field takes place. It is shown that the properties of drift waves depend on the direction of propagation and thicknesses of layers. It was received the conditions of wave instability.
Keywords :
drift instability; gallium arsenide; plasma drift waves; semiconductor superlattices; GaAs; dissipation process; drift wave instability; multilayered periodic semiconductor structure; semiconductor superlattice; Dispersion; Frequency; Maxwell equations; Modems; Nanostructured materials; Periodic structures; Production; Semiconductor materials; Semiconductor nanostructures; Semiconductor superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
Type :
conf
DOI :
10.1109/MIKON.2006.4345325
Filename :
4345325
Link To Document :
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