Title :
B2H6 plasma doping with "in-situ He pre-amorphization"
Author :
Saki, Y. ; Jin, C.G. ; Tamura, H. ; Mizuno, B. ; Higaki, R. ; Satoh, T. ; Majima, K. ; Sauddin, H. ; Takagi, K. ; Ohmi, S. ; Tsutsui, K. ; Iwai, H.
Author_Institution :
Ultimate Junction Technol. Inc., Osaka, Japan
Abstract :
Plasma doping process to reduce sheet resistance (Rs) keeping shallow junction depth (Xj) was demonstrated. In-situ Helium pre-amorphization (He-PA) was introduced to plasma doping (PD) method. High dose and ultra-shallow as-doped profiles were optimized by adjusting B2H6 PD conditions. The optical absorption rate in the amorphous layer and Xj was controlled by the He-PA conditions. Advantage of these new techniques to form ultra-shallow p+-n junction were verified by flash lamp annealing (FLA) and laser annealing (All Solid-State Green Laser Annealing: ASLA) for the first time. Excellent results on Rs, Xj and abruptness of profiles were obtained.
Keywords :
amorphisation; boron compounds; electrical resistivity; laser beam annealing; p-n junctions; plasma immersion ion implantation; rapid thermal annealing; semiconductor doping; B2H6; B2H6 plasma doping; flash lamp annealing; in-situ He pre-amorphization; laser annealing; optical absorption rate; shallow junction depth; sheet resistance; ultra-shallow p+-n junction; Absorption; Amorphous materials; Annealing; Doping; Helium; Lamps; Optical control; Plasmas; Solid lasers; Solid state circuits;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345466
