Title :
Thermally robust dual-work function ALD-MNx MOSFETs using conventional CMOS process flow
Author :
Park, D.-G. ; Luo, Z.J. ; Edleman, N. ; Zhu, W. ; Nguyen, P. ; Wong, K. ; Cabral, C. ; Jamison, P. ; Lee, B.H. ; Chou, A. ; Chudzik, M. ; Bruley, J. ; Gluschenkov, O. ; Ronsheim, P. ; Chakravarti, A. ; Mitchell, R. ; Ku, V. ; Kim, H. ; Duch, E. ; Kozlowsk
Author_Institution :
Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
Thermally stable dual work function metal gates are demonstrated using a conventional CMOS process flow. The gate structure consists of poly-Si/metal nitrides (MNx) SiON (or high-k)/Si stack with atomic layer deposition (ALD)-TaNx for the NFET and ALD-WNx for the PFET. Much enhanced drive current (Id) and transconductance (Gm) values, and reduced off current (Ioff) characteristics were attained with ALD-MNx gated devices over control poly-Si and PVD-MNx devices within controllable Vt shifts. Excellent scalability of dual work function MNx/high-k gate stack was demonstrated: the EOT was down to 6.6Å with low leakage in a low thermal budget device scheme.
Keywords :
CMOS integrated circuits; MOSFET; atomic layer deposition; thermal stability; work function; ALD-MNx MOSFETs; WNx; atomic layer deposition; conventional CMOS process flow; scalability; thermally robust dual-work function; Annealing; CMOS process; Fabrication; Jamming; Leakage current; MOSFETs; Robustness; Temperature; Thermal stability; Tin;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345470
