DocumentCode
1610660
Title
Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Author
Anil, K.G. ; Veloso, A. ; Kubicek, S. ; Schram, T. ; Augendre, E. ; De Marneffe, J.F. ; Devriendt, K. ; Lauwers, A. ; Brus, S. ; Henson, K. ; Biesemans, S.
Author_Institution
Interuniv. Microelectron. Center, Leuven, Belgium
fYear
2004
Firstpage
190
Lastpage
191
Abstract
We have fabricated fully Ni-silicided metal gate (FUSI) CMOS devices with HfO2-based gate dielectrics for the first time. We demonstrate that full silicidation eliminates the Fermi level pinning at the polySi-HfO2 dielectric interface in pFETs. For nMOS devices, a 5 orders of magnitude reduction in short channel sub-threshold leakage is obtained with similar drive current compared to the poly gate devices. In addition, the FUSI process does not degrade the hysterisis nor the dielectric breakdown. This result makes FUSI on high-K a strong candidate for scaled low power technologies.
Keywords
CMOS integrated circuits; dielectric thin films; electric breakdown; hafnium compounds; leakage currents; CMOS devices; Fermi level pinning; HfO2; HfO2 based high-k gate dielectrics; dielectric breakdown; fully Ni-silicided metal gates; hysteresis; low power applications; scaled low power technologies; short channel sub-threshold leakage; Capacitors; Degradation; Dielectric devices; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Microelectronics; Silicidation;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345472
Filename
1345472
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