Demonstration of Germanium nMOSFETs with interface passivation of ozone pre-gate treatment and ozone ambient annealing

Author

Lei Liu ; Mei Zhao ; Renrong Liang ; Jing Wang ; Jun Xu

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

Germanium nMOSFETs with Ge/GeO₂/HfO₂/TiN gate stacks are fabricated and analyzed. The Ge/HfO₂ interface is passivated using ozone pre-gate treatment and ozone ambient annealing method to form a Ge/GeO₂/HfO₂ gate stack. The fabricated devices show promising electrical characteristics. The peak electron mobility of 586 cm²/Vs reflects the effective passivation results of the dual ozone treatment method.

Keywords

MOSFET; annealing; elemental semiconductors; germanium; germanium compounds; hafnium compounds; ozonation (materials processing); passivation; titanium compounds; Ge-GeO₂-HfO₂-TiN; dual ozone treatment method; electrical characteristics; electron mobility; gate stacks; germanium nMOSFETs; interface passivation; ozone ambient annealing method; ozone pre-gate treatment; Annealing; Gases; Germanium; Hafnium compounds; Logic gates; MOSFET; Passivation; germanium; nMOSFETs; ozone ambient annealing; ozone treatment; surface passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839324

Filename

6839324