Title :
A novel sub-50 nm multi-bridge-channel MOSFET (MBCFET) with extremely high performance
Author :
Lee, Sung-Young ; Yoon, Eun-Jung ; Kim, Sung-Min ; Oh, Chang Woo ; Li, Ming ; Choi, Jeong-Dong ; Yeo, Kyouug-Hwan ; Kim, Min-Sang ; Cho, Hye-Jin ; Kim, Sung-Hwan ; Kim, Doug-Won ; Park, Donggun ; Kim, Kinam
Author_Institution :
R&D Center, Samsung Electron. Co., Kyunggi-Do, South Korea
Abstract :
We demonstrate highly manufacturable sub-50 nm MBCFET with the Ion of 4.26 mA/ μm at VDD = 1.2V, which is the best performance ever reported. This excellent performance of the MBCFET is resulted from the vertically stacked channels and enhanced mobility. It has been fabricated on bulk Si substrate by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and damascene gate process. It has structural and electrical merits in scaling and process integration.
Keywords :
Ge-Si alloys; MOSFET; semiconductor epitaxial layers; semiconductor growth; silicon; 1.2 V; 50 nm; SiGe-Si-SiGe-Si; SiGe/Si/SiGe/Si layers; damascene gate process; enhanced mobility; extremely high performance; multiple epitaxial growth; sub-50 nm multi-bridge-channel MOSFET; vertically stacked channels; Bridge circuits; Epitaxial growth; Etching; Fabrication; MOSFET circuits; Manufacturing processes; Silicon compounds; Silicon germanium; Silicon on insulator technology; Substrates;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345478
