Title :
High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures
Author :
Mizuno, T. ; Sugiyama, N. ; Tezuka, Taro ; Moriyama, Y. ; Nakaharai, S. ; Maeda, T. ; Takagi, S.
Author_Institution :
MIRAI-ASET, Kawasaki, Japan
Abstract :
In this study, we have experimentally demonstrated, for the first time, the Gm enhancement due to higher velocity injection in a MOSFET structure with a source SiGe/strained-Si heterojunction (hetero-MOSFETs), compared to those in strained-SOIs (SSOI) and conventional SOIs. We present the concept and the simulated results of the hetero-source MOSFETs, followed by the process steps and experimental Gm characteristics.
Keywords :
Ge-Si alloys; MOSFET; ballistic transport; elemental semiconductors; silicon; SiGe/strained-Si heterojunction source structures; ballistic transistors; high velocity electron injection MOSFETs; Annealing; Circuits; Electrons; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Kinetic energy; MISFETs; MOSFETs; Silicon germanium;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345479
