DocumentCode
1610907
Title
Improvement of SIMS multilayer profile analysis
Author
Boulakroune, M´Hamed ; Benatia, D.
Author_Institution
Electr. Eng. Dept., Univ. Kasdi Merbah, Ouargla, Algeria
fYear
2012
Firstpage
716
Lastpage
720
Abstract
SIMS deconvolution of boron delta doped multilayer has been successfully performed using a synthetic algorithm without the requirement of specific and detailed knowledge of response functions from measurements of delta layers which often is not available. This algorithm is based on partial deconvolution and scale-frequency shrinkage. The contributions of high frequency noise are removed by scale-frequency shrinkage. The partial deconvolution addresses to remove the residual ion mixing effect. It is shown that this algorithm leads to an enhancement of the depth resolution by a factor 2 compared to that before deconvolution without producing artifacts and aberrations which are physically not accepted.
Keywords
boron; deconvolution; high-frequency effects; multilayers; noise; secondary ion mass spectroscopy; signal resolution; SIMS deconvolution; SIMS multilayer profile analysis; boron delta doped multilayer; delta layers measurements; depth resolution enhancement; factor 2; high frequency noise; partial deconvolution-based algorithm; residual ion mixing effect; response functions; scale-frequency shrinkage; scale-frequency shrinkage-based algorithm; synthetic algorithm; Atomic measurements; Boron; Deconvolution; Noise; Oscillators; Shape; Signal processing algorithms; Multilayers; Partial deconvolution; SIMS; Scale-frequency shrinkage; depth resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Sciences of Electronics, Technologies of Information and Telecommunications (SETIT), 2012 6th International Conference on
Conference_Location
Sousse
Print_ISBN
978-1-4673-1657-6
Type
conf
DOI
10.1109/SETIT.2012.6482002
Filename
6482002
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