Influence of plasma power and sputtering agent on gap-fill and MOSFET performances in HDP-CVD STI oxide process

Author

Chun Chi Lai ; Liang Yi Li ; Tzung Bin Huang ; Hung Ju Chien ; Tzung Hua Ying

Author_Institution

Powerchip Technol. Corp., Hsinchu, Taiwan

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

The gap-fill capability and plasma charging damage (PCD) of high-density plasma chemical vapor deposition (HDP-CVD) process have been investigated in this study. During HDP-CVD process, the physical sputtering behavior impacts PCD and gap-fill performances. Two sputtering agents, Ar and H₂, are admitted to the HDP-CVD. In the process with high bias radio frequency power, the utility of H₂ plasma successfully reduces PCD on gate oxide in Id-Vg curve. The gap-fill capability and PCD have been improved by the combination of H₂ gas and increasing plasma power.

Keywords

MOSFET; plasma CVD; sputter deposition; H₂ plasma utility; HDP-CVD STI oxide process; MOSFET performances; PCD; gap-fill capability; gate oxide; high bias radio frequency power; high-density plasma chemical vapor deposition process; physical sputtering behavior; plasma charging damage; plasma power; shallow trench isolation; sputtering agent; Etching; Logic gates; MOSFET; Plasmas; Radio frequency; Silicon; Sputtering; high-density plasma chemical vapor deposition (HDP-CVD); plasma charging damage (PCD);

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839336

Filename

6839336