Influence of plasma power and sputtering agent on gap-fill and MOSFET performances in HDP-CVD STI oxide process

The gap-fill capability and plasma charging damage (PCD) of high-density plasma chemical vapor deposition (HDP-CVD) process have been investigated in this study. During HDP-CVD process, the physical sputtering behavior impacts PCD and gap-fill performances. Two sputtering agents, Ar and H₂, are admitted to the HDP-CVD. In the process with high bias radio frequency power, the utility of H₂ plasma successfully reduces PCD on gate oxide in Id-Vg curve. The gap-fill capability and PCD have been improved by the combination of H₂ gas and increasing plasma power.