Title :
A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications
Author :
Kuhn, K. ; Basco, R. ; Becher, D. ; Hattendorf, M. ; Packan, P. ; Post, I. ; Vandervoorn, P. ; Young, I.
Author_Institution :
Portland Technol. Dev., Intel Corp., Hillsboro, OR, USA
Abstract :
RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at fT/fmax = 209/248 GHz (70nm) and fT/fmax = 166/277 GHz (80nm) with Fmin at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; 166 to 277 GHz; 209 to 248 GHz; 90 nm; HBTs BiCMOS; NMOS; RF CMOS performance; SiGe HBT devices; analog/mixed-signal/RF circuit applications; integrated communications process; CMOS process; CMOS technology; Circuits; Communications technology; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Radio frequency; Roentgenium; Silicon germanium;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345492
