• DocumentCode
    1611175
  • Title

    A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications

  • Author

    Kuhn, K. ; Basco, R. ; Becher, D. ; Hattendorf, M. ; Packan, P. ; Post, I. ; Vandervoorn, P. ; Young, I.

  • Author_Institution
    Portland Technol. Dev., Intel Corp., Hillsboro, OR, USA
  • fYear
    2004
  • Firstpage
    224
  • Lastpage
    225
  • Abstract
    RF CMOS performance from a 90nm derivative communications process technology is compared to SiGe BJT performance. NMOS performance at fT/fmax = 209/248 GHz (70nm) and fT/fmax = 166/277 GHz (80nm) with Fmin at 0.3 dB (2GHz) and 0.6 dB (10GHz) suggests there is no major reason to implement SiGe HBTs BiCMOS in an integrated communications process.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; 166 to 277 GHz; 209 to 248 GHz; 90 nm; HBTs BiCMOS; NMOS; RF CMOS performance; SiGe HBT devices; analog/mixed-signal/RF circuit applications; integrated communications process; CMOS process; CMOS technology; Circuits; Communications technology; Germanium silicon alloys; Heterojunction bipolar transistors; MOS devices; Radio frequency; Roentgenium; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345492
  • Filename
    1345492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1611175