Title :
A rapid analysis of very short channel MOSFET performances by using a dynamic simple model
Author :
Rabhi, Abdelbaki ; Benhamadouche, Abdelouahab ; Charlot, Jean-jacques
Author_Institution :
Dept. of Electron., Univ. Ferhat Abbas, Setif, Algeria
Abstract :
A simplified MOSFET model is presented in this paper. The performances of the model, UNICELL (Unique Cell Model), are compared to those provided by BSIM3V3 taken as reference, even for very short channel length MOSFET (45 nm). It is shown that using only two UNICELL cells (BICELL) gives a good deal for CAD static and dynamic usage, because of the few number of parameters to be used in comparison to BSIM3. BICELL can also be used for determining internal performance analysis.
Keywords :
MOSFET; semiconductor device models; BICELL; BSIM3V3; CAD static; UNICELL; dynamic simple model; size 45 nm; unique cell model; very short channel MOSFET; Design automation; Hardware design languages; Load modeling; MOSFET circuits; Modulation; SPICE; Solid modeling; BSIM3V3; MOSFET Modeling; VERILOG-A;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7011-2
Electronic_ISBN :
978-83-928756-4-2
