DocumentCode :
161130
Title :
Effects of Copper and Indium ratio on the performance of the CuInSe2 solar cells
Author :
Ming-Chun Lee ; Jui-Fu Yang ; Ming-Yang Hsieh ; Shou-Yi Kuo
Author_Institution :
Grad. Inst. of Electro-Opt. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
fYear :
2014
fDate :
7-10 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
Copper Indium Diselenide (CuInSe2) thin films of different Cu-In layers were prepared using sequential elemental evaporation technique. Respectively, the selenization within a close spaced graphite box resulting in quality CuInSe2 (CIS) films was developed. The comparative analysis of crystalline properties evaluated by energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction (XRD), Raman scattering measurements is presented here. A photovoltaic efficiency of the heterojunction is compared with that the structure of SLG/Mo/CuInSe2/CdS/ZnO/AZO/Al photovoltaic devices. Introducing In-excess CIS film increase the efficiency to 4.62%, because of the current density and open circuit voltage were improved.
Keywords :
Raman spectra; X-ray chemical analysis; X-ray diffraction; copper compounds; indium compounds; scanning electron microscopy; semiconductor thin films; solar cells; ternary semiconductors; vacuum deposition; CIS films; Cu-In layers; CuInSe2; EDX; Raman scattering measurements; SEM; X-ray diffraction; XRD; close spaced graphite box; copper indium diselenide thin films; crystalline properties; current density; energy-dispersive X-ray spectroscopy; open circuit voltage; scanning electron microscope; selenization; sequential elemental evaporation technique; Copper; Films; Photovoltaic cells; Photovoltaic systems; Sputtering; X-ray scattering; Copper Indium Diselenide (CuInSe2); Evaporation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
Type :
conf
DOI :
10.1109/ISNE.2014.6839346
Filename :
6839346
Link To Document :
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