The fabrication and stability study of bismuth doped zinc oxide prepared by spray pyrolysis

Author

YuHsuan Huang ; WenHow Lan ; MingChing Shih ; ChunYi Lee ; YenWen Wang ; WeiHsuan Hsu

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

The bismuth doped zinc oxide (ZnO:Bi) was prepared by spray pyrolysis with zinc acetate and bismuth nitrate precursors. The surface morphology and crystalline quality were characterized. For films without and with low bismuth nitrate content, n-type conduction was observed. The p-type zinc oxide film can be achieved with the bismuth nitrate concentration doping more than 0.3 at.%. The film conductivity, concentration and mobility were characterized. A stable hole concentration as 4×10¹⁷ cm^-3 can be achieved with 5% bismuth nitrate doping.

Keywords

II-VI semiconductors; bismuth; crystal morphology; hole density; hole mobility; pyrolysis; semiconductor doping; semiconductor growth; semiconductor thin films; spray coating techniques; surface conductivity; surface morphology; wide band gap semiconductors; zinc compounds; ZnO:Bi; bismuth doped zinc oxide; bismuth nitrate concentration doping; bismuth nitrate precursors; crystalline quality; film concentration; film conductivity; film mobility; low bismuth nitrate content; n-type conduction; p-type zinc oxide film; spray pyrolysis; stability study; stable hole concentration; surface morphology; zinc acetate; Bismuth; Conductivity; Doping; Fabrication; Films; Surface morphology; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839349

Filename

6839349