Title :
The fabrication and stability study of bismuth doped zinc oxide prepared by spray pyrolysis
Author :
YuHsuan Huang ; WenHow Lan ; MingChing Shih ; ChunYi Lee ; YenWen Wang ; WeiHsuan Hsu
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
The bismuth doped zinc oxide (ZnO:Bi) was prepared by spray pyrolysis with zinc acetate and bismuth nitrate precursors. The surface morphology and crystalline quality were characterized. For films without and with low bismuth nitrate content, n-type conduction was observed. The p-type zinc oxide film can be achieved with the bismuth nitrate concentration doping more than 0.3 at.%. The film conductivity, concentration and mobility were characterized. A stable hole concentration as 4×1017 cm-3 can be achieved with 5% bismuth nitrate doping.
Keywords :
II-VI semiconductors; bismuth; crystal morphology; hole density; hole mobility; pyrolysis; semiconductor doping; semiconductor growth; semiconductor thin films; spray coating techniques; surface conductivity; surface morphology; wide band gap semiconductors; zinc compounds; ZnO:Bi; bismuth doped zinc oxide; bismuth nitrate concentration doping; bismuth nitrate precursors; crystalline quality; film concentration; film conductivity; film mobility; low bismuth nitrate content; n-type conduction; p-type zinc oxide film; spray pyrolysis; stability study; stable hole concentration; surface morphology; zinc acetate; Bismuth; Conductivity; Doping; Fabrication; Films; Surface morphology; Zinc oxide;
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
DOI :
10.1109/ISNE.2014.6839349