Title :
Full integration and characterization of Localized ONO Memory (LONOM) for embedded flash technology
Author :
Cho, I.W. ; Lim, B.R. ; Kim, J.-H. ; Kim, S.S. ; Kim, KC ; Lee, B.J. ; Bae, G.J. ; Lee, N.I. ; Kim, S.H. ; Koh, K.W. ; Kang, H.K. ; Seo, M.K. ; Kim, S.W. ; Hwang, S.H. ; Lee, D.Y. ; Kim, M.C. ; Chae, S.D. ; Seo, S.A. ; Kim, C.-W.
Author_Institution :
Syst. LSI Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea
Abstract :
We have successfully integrated 8M bits Localized ONO Memory (LONOM) for the embedded nonvolatile memory using 0.13um standard logic process with 5-level Cu metallization. which has a small cell size of 0.276UM and the simplest cell array structure. Without any special algorithm, the localized storage layer of the LONOM can satisfy the essential features for an embedded memory solution, such as low program current. disturb-free read operation and good endurance characteristics. The read speed is as high as 60MHz at Vcc=0.9V, 85°C and the current consumption is lower than 5mA at Vcc = 1.4V.
Keywords :
copper; flash memories; integrated circuit metallisation; 0.13 micron; 1.4 V; 5 mA; 60 MHz; 8 Mbit; 85 degC; 8M bits Localized ONO Memory; Cu metallization; embedded flash technology; embedded nonvolatile memory; small cell size; standard logic process; Degradation; Electrons; Flash memory; Large scale integration; Logic arrays; Metallization; Nonvolatile memory; Programmable logic arrays; SONOS devices; Threshold voltage;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345502
