Title :
22 GHz amplifier using a 0.12 μm CMOS technology
Author :
Pienkowski, Dariusz ; Boeck, Georg
Author_Institution :
Berlin Univ. of Technol., Berlin
Abstract :
A 22 GHz low-noise amplifier (LNA) was designed, fabricated in standard 0.12 μm CMOS technology and measured. The LNA chip achieves a maximum gain of 5.5 dB, a noise figure of 10.3 dB and return losses at in-/output of 15 and 10 dB, respectively. The LNA operates at a supply voltage 1.2 V and consumes a DC-power of just 5.4 mW. To the author best knowledge it is the first cascode implementation in CMOS standard process beyond 20 GHz.
Keywords :
CMOS digital integrated circuits; integrated circuit design; low noise amplifiers; microwave amplifiers; CMOS technology; frequency 22 GHz; gain 5.5 dB; low-noise amplifier design; low-noise amplifier fabrication; power 5.4 mW; size 0.12 mum; voltage 1.2 V; CMOS technology; Character generation; Circuit topology; Electrostatic discharge; Frequency; Impedance matching; Network topology; Noise figure; Parasitic capacitance; Voltage;
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
DOI :
10.1109/MIKON.2006.4345369
