DocumentCode :
161159
Title :
Influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor
Author :
Libin Liu ; Zhigang Zhang ; Jing Wang ; Jun Xu ; Yi-Ting Lin ; Chao-Sung Lai
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
7-10 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
The influence of trapped charge on the sensitivity of Ionic-Sensitive Field Effect Transistor (ISFET) is analyzed by a theoretical model. The trapped charges can be used to shift the pHpzc and then influence the sensitive characteristics of the ISFET. However, the trapped charge only takes effect when pH is around pHpzc.
Keywords :
ion sensitive field effect transistors; semiconductor device models; ISFET; ionic-sensitive field effect transistor; sensitivity characteristics; trapped charge; Capacitance; Electric potential; Field effect transistors; Ions; Logic gates; Sensitivity; Silicon; ISFET; flash; model; pH; sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
Type :
conf
DOI :
10.1109/ISNE.2014.6839361
Filename :
6839361
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=161159
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