Title :
Optical gain properties of quantum dot arrays fabricated by the edge-defined nanowires
Author_Institution :
Sch. of EE, Hong Ik Univ., Seoul, South Korea
Abstract :
The optical gain properties of the quantum dot arrays fabricated by the edge-defined nanowires have been investigated to quantitatively assess the modulation bandwidth for various mini bandgap of the quantum dot arrays on GaN wurtzite substrate.
Keywords :
III-V semiconductors; aluminium compounds; electron density; energy gap; finite element analysis; gallium compounds; nanofabrication; nanowires; optical arrays; optical constants; semiconductor quantum dots; wide band gap semiconductors; 3D finite-element method; GaN; GaN-AlN; carrier capture-escape effects; edge-defined nanowires; electron density profiles; mini bandgap; modulation bandwidth; multilevel rate equations; optical gain properties; quantum dot arrays; wurtzite substrate; Bandwidth; Electrons; Gallium nitride; Nanowires; Optical arrays; Optical modulation; Planarization; Quantum dots; Quantum well devices; Wire;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421927
