Title :
Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection
Author :
Aissat, A. ; Nacer, S. ; Aliane, H. ; Vilcot, J.P.
Author_Institution :
Dept. of Electron., Univ. Saad Dahlab of Blida, Blida, Algeria
Abstract :
In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7-3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2-3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectors.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; gas sensors; indium compounds; internal stresses; optical constants; optical materials; semiconductor quantum wells; valence bands; GaxIn1-x-yAsySb1-y-GaSb; GaSb; III-V based components; air detection; atmospheric windows; conduction band; gas detection; noncooled detectors; optical fiber links; radar transmissions; semiconductor lasers; solid solution; source-detector direct transition; spectroscopic analysis; strained quantum well structure; valence discontinuity; Diode lasers; Gallium; Gas lasers; Quantum well lasers; Substrates; GaInAsSb/GaSb; GaInNAsSb/GaAs; Optoelectronic; Semiconductor; laser diode; quantum wells;
Conference_Titel :
Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International
Conference_Location :
Riyadh
Print_ISBN :
978-1-4577-0068-2
Electronic_ISBN :
978-1-4577-0067-5
DOI :
10.1109/SIECPC.2011.5876979
