DocumentCode
1611650
Title
Directional emission InGaAsP/InP mirocylinder lasers
Author
Wang, Shi-Jiang ; Huang, Yong-Zhen ; Yang, Yue-De ; Lin, Jian-Dong ; State, Y.D.
Author_Institution
Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
fYear
2010
Firstpage
137
Lastpage
138
Abstract
Electrically injected InGaAsP/InP microcylinder lasers connected to an output waveguide are fabricated. Observed mode jump versus temperature with an interval of two times of longitudinal mode interval is agreement with that predicted by mode coupling.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; waveguide lasers; whispering gallery modes; InGaAsP-InP; directional emission mirocylinder lasers; electrically injected lasers; longitudinal mode; mode coupling; output waveguide; scanning electron microscopy; Etching; Indium phosphide; Laser modes; Laser theory; Optical coupling; Power generation; Scanning electron microscopy; Semiconductor lasers; Temperature; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location
Majorca
Print_ISBN
978-1-4244-5240-8
Electronic_ISBN
978-1-4244-5241-5
Type
conf
DOI
10.1109/PHOTWTM.2010.5421928
Filename
5421928
Link To Document