• DocumentCode
    1611650
  • Title

    Directional emission InGaAsP/InP mirocylinder lasers

  • Author

    Wang, Shi-Jiang ; Huang, Yong-Zhen ; Yang, Yue-De ; Lin, Jian-Dong ; State, Y.D.

  • Author_Institution
    Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
  • fYear
    2010
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    Electrically injected InGaAsP/InP microcylinder lasers connected to an output waveguide are fabricated. Observed mode jump versus temperature with an interval of two times of longitudinal mode interval is agreement with that predicted by mode coupling.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor lasers; waveguide lasers; whispering gallery modes; InGaAsP-InP; directional emission mirocylinder lasers; electrically injected lasers; longitudinal mode; mode coupling; output waveguide; scanning electron microscopy; Etching; Indium phosphide; Laser modes; Laser theory; Optical coupling; Power generation; Scanning electron microscopy; Semiconductor lasers; Temperature; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
  • Conference_Location
    Majorca
  • Print_ISBN
    978-1-4244-5240-8
  • Electronic_ISBN
    978-1-4244-5241-5
  • Type

    conf

  • DOI
    10.1109/PHOTWTM.2010.5421928
  • Filename
    5421928