DocumentCode :
1611745
Title :
InP HBT XOR and phase-detector for 40 Gbit/s clock and data recovery (CDR)
Author :
Puyal, V. ; Konczykowska, A. ; Riet, M. ; Bernard, S. ; Nouet, P. ; Godin, J.
Author_Institution :
Alcatel-Thales III-V Lab, Marcoussis
fYear :
2006
Firstpage :
1115
Lastpage :
1118
Abstract :
High-speed XOR and phase-detector circuit necessary for clock and data recovery were designed and fabricated in a self-aligned InP DHBT technology. In the paper, we present the circuit design with the special highlight of the architecture choice and design challenges. Measurements results of fabricated circuits are shown.
Keywords :
heterojunction bipolar transistors; phase detectors; synchronisation; CDR; InP DHBT XOR; bit rate 40 Gbit/s; circuit design; clock-data recovery; double heterojunction bipolar transistor technology; phase-detector; Circuit synthesis; Clocks; DH-HEMTs; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical receivers; Optical transmitters; Time division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwaves, Radar & Wireless Communications, 2006. MIKON 2006. International Conference on
Conference_Location :
Krakow
Print_ISBN :
978-83-906662-7-3
Type :
conf
DOI :
10.1109/MIKON.2006.4345382
Filename :
4345382
Link To Document :
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