Title :
High-performance silicon modulator for integrated transceivers fabricated on 300-mm wafer
Author :
Akiyama, Soramichi ; Baba, Toshihiko ; Imai, Masayoshi ; Mori, Marco ; Usuki, Tatsuya
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA), Tsukuba, Japan
Abstract :
We fabricated 25-Gb/s silicon modulators with side-wall gratings on a 300-mm wafer. They exhibited high modulation efficiency of VπL = 0.274 V-cm at 12.5 GHz in forward-biased mode. Equivalent-circuit parameters showed good in-wafer uniformity for stable frequency-compensated operations.
Keywords :
diffraction gratings; elemental semiconductors; equivalent circuits; integrated optics; optical fabrication; optical modulation; optical transceivers; silicon; Si; bit rate 25 Gbit/s; equivalent-circuit parameters; forward-biased mode; frequency 12.5 GHz; high-performance silicon modulator; in-wafer uniformity; integrated transceivers; side-wall gratings; stable frequency-compensated operations; Frequency modulation; Gratings; Optical waveguides; Phase shifters; Photonics; Silicon;
Conference_Titel :
Optical Communication (ECOC), 2014 European Conference on
Conference_Location :
Cannes
DOI :
10.1109/ECOC.2014.6963947
