Holding voltage adjustable silicon controlled rectifier

Author

Betak, Petr

Author_Institution

Dept. of Microelectron., BUT, Brno, Czech Republic

fYear

2008

Firstpage

273

Lastpage

275

Abstract

Holding voltage adjustable Silicon Controlled Rectifier (HVASCR) is a SCR with possibility to tune the holding voltage. The HVASCR structure forms good ESD (electrostatic discharge) protection. Such structures act as a protection of integrated circuits against parasitic electrostatic discharge. The use of such structures provides ICs robustness against ESD. Typical ESD cell is gate grounded NMOS transistor or SCR. The HVASCR enables tuning of I-V snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC) and measurement was done for samples manufactured in 1.5 mum BiCMOS.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; electrostatic discharge; thyristors; BiCMOS technology; CMOS very high voltage technology; HVASCR; I-V snapback characteristics; electrostatic discharge protection; gate grounded NMOS transistor; holding voltage adjustable silicon controlled rectifier; integrated circuit protection; size 1.5 mum; CMOS technology; Circuit optimization; Circuit simulation; Electrostatic discharge; Integrated circuit technology; MOSFETs; Protection; Robustness; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on

Conference_Location

Budapest

Print_ISBN

978-1-4244-3972-0

Electronic_ISBN

978-1-4244-3974-4

Type

conf

DOI

10.1109/ISSE.2008.5276610

Filename

5276610