Title :
Holding voltage adjustable silicon controlled rectifier
Author_Institution :
Dept. of Microelectron., BUT, Brno, Czech Republic
Abstract :
Holding voltage adjustable Silicon Controlled Rectifier (HVASCR) is a SCR with possibility to tune the holding voltage. The HVASCR structure forms good ESD (electrostatic discharge) protection. Such structures act as a protection of integrated circuits against parasitic electrostatic discharge. The use of such structures provides ICs robustness against ESD. Typical ESD cell is gate grounded NMOS transistor or SCR. The HVASCR enables tuning of I-V snapback characteristics. Simulated technology was CMOS very high voltage (VHVIC) and measurement was done for samples manufactured in 1.5 mum BiCMOS.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; electrostatic discharge; thyristors; BiCMOS technology; CMOS very high voltage technology; HVASCR; I-V snapback characteristics; electrostatic discharge protection; gate grounded NMOS transistor; holding voltage adjustable silicon controlled rectifier; integrated circuit protection; size 1.5 mum; CMOS technology; Circuit optimization; Circuit simulation; Electrostatic discharge; Integrated circuit technology; MOSFETs; Protection; Robustness; Thyristors; Voltage;
Conference_Titel :
Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
Conference_Location :
Budapest
Print_ISBN :
978-1-4244-3972-0
Electronic_ISBN :
978-1-4244-3974-4
DOI :
10.1109/ISSE.2008.5276610
