Turn-off and short circuit behaviour of 4H SiC JFETs

Author

Weis, B. ; Braun, M. ; Friedrichs, P.

Author_Institution

SIEMENS Autom. & Drives, Erlangen, Germany

Volume

1

fYear

2001

Firstpage

365

Abstract

In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode. Turn-off behaviour of this switch is reported, whereas turn-off means both turning off in "switch" operation as well as turning off in "diode" operation. Finally, short circuit operation of the switch is demonstrated.

Keywords

field effect transistor switches; junction gate field effect transistors; power semiconductor switches; semiconductor device measurement; semiconductor device testing; silicon compounds; 4H SiC JFETs; SiC; cascode configuration; freewheeling diode; low voltage Si MOSFET; short circuit behaviour; short circuit operation; turn-off behaviour; Inverters; JFET circuits; Leg; Low voltage; MOSFET circuits; Power semiconductor switches; Semiconductor diodes; Silicon carbide; Surface resistance; Turning;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE

Conference_Location

Chicago, IL, USA

ISSN

0197-2618

Print_ISBN

0-7803-7114-3

Type

conf

DOI

10.1109/IAS.2001.955445

Filename

955445