Title :
Polarity dependence of FN stress induced degradation on NMOSFETs with polysilicon gate and HfSiON gate dielectrics
Author :
Choi, R. ; Lee, B.H. ; Brown, F. ; Zeitzoff, P. ; Sim, J.H. ; Lee, J.C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Polarity dependent FN stress induced degradation was observed on NMOSFETs having a polysilicon gate and HfSiON gate dielectric. Positive bias stress (substrate injection) showed more degradation on the bulk region of high-k at the near valence band edge region and low-voltage stress induced leakage current behavior was observed around the flatband voltage. Negative bias stress (gate injection) degraded a wider energy range and in a lower energy band region than positive stress. Therefore, the gate injection case caused worse degradation in terms of interface state density and subthreshold swing than the substrate injection case.
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; hafnium compounds; interface states; leakage currents; semiconductor device measurement; silicon; HfSiON-Si; NMOSFET; bulk region; energy band region; flatband voltage; gate dielectric; gate injection; interface state density; low-voltage stress induced leakage current; near valence band edge region; negative bias stress; polarity dependent FN stress induced degradation; polysilicon gate; positive bias stress; substrate injection; subthreshold swing; Annealing; Charge pumps; Degradation; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Interface states; MOCVD; MOSFETs; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345525