Title :
Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application
Author :
Lorenz, L. ; Deboy, G. ; Zverev, I.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The new CoolMOS/sup TM/ C3 generation combines extremely high on-state conductivity with ultra fast switching speed at full pulse current capability. In the first generation of CoolMOS/sup TM/, due to the small chip size, one had a reduction of the saturation current at the cell level. This technique results in a reduced current capability of the device at low gate voltages. In many applications, the outstanding switching performance of the cannot be utilized due to the dynamic behaviour of CoolMOS/sup TM/ the diode. For this reason ,a whole family of SiC-diodes has been developed to get the ideal matched pair of switch and ultra fast diodes. The goal of ultra low loss applications in SMPS, power factor correction circuits and motor control units will be achieved completely.
Keywords :
Schottky diodes; field effect transistor switches; power MOSFET; power semiconductor switches; switched mode power supplies; switching circuits; CoolMOS/sup TM/ C3 generation; CoolMOST/sup TM/ transistor; SMPS; SiC-Schottky diode; dynamic behaviour; full pulse current capability; gate voltage; matched pair; motor control; on-state conductivity; power factor correction; switching performance; ultra fast switching speed; ultra low loss applications; Circuit topology; Conductivity; Power MOSFET; Power electronics; Power semiconductor switches; Power system reliability; Semiconductor diodes; Space charge; Vehicle dynamics; Voltage;
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-7114-3
DOI :
10.1109/IAS.2001.955448
