Title :
Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers
Author :
Tzeng, P.J. ; Maikap, S. ; Lai, W.Z. ; Liang, C.S. ; Chen, P.S. ; Lee, L.S. ; Liu, C.W.
Author_Institution :
Ind. Technol. Res. Inst., Electron. Res. & Service Organ., Hsinchu, Taiwan
Abstract :
The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The observed HfO2/semiconductor interfacial layer is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved by increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO2 film leads to more bulk traps induced electrical degradation.
Keywords :
Ge-Si alloys; MIS devices; annealing; atomic layer deposition; crystallisation; dielectric thin films; elemental semiconductors; hafnium compounds; semiconductor device reliability; semiconductor materials; silicon; 600 degC; 800 degC; 900 degC; ALD film reliability; PDA temperature; Si-HfO2; SiGe-HfO2; annealing temperature; atomic layer deposition; bulk traps induced electrical degradation; crystallization; gate dielectrics; interfacial oxide layer; post deposition annealing effects; strained MOS devices; Annealing; Atomic layer deposition; Crystallization; Degradation; Dielectric devices; Germanium silicon alloys; Hafnium oxide; MOS devices; Silicon germanium; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345527
