Title :
Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering
Author :
Chen-Su Chiang ; Wen-Hsi Lee ; Jap, Franco
Author_Institution :
Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this study, the Ni-Cr-Si material of thin film resistor on Al2O3 substrate using DC and RF magnetron sputtering techniques are compared. It can be seen that the difference of crystalline structure with various sputtering methods can be observed using X-ray diffraction spectra pattern. The uniform large grain size with low resistance can be obtained by using a high annealing temperature of 450°C. In addition, a stable near-zero temperature coefficient of resistance (8 ppm /°C) can be attained by using RF sputtering with annealing temperature at 400°C.
Keywords :
X-ray diffraction; X-ray spectra; alumina; chromium; crystal structure; elemental semiconductors; grain size; nickel; silicon; sputter deposition; thin film resistors; Al2O3; DC magnetron sputtering deposition; Ni-Cr-Si; RF magnetron sputtering deposition; X-ray diffraction spectra pattern; crystalline structure; electrical characteristics; high annealing temperature; microstructural characteristics; stable near-zero temperature coefficient of resistance; temperature 400 degC; thin-film resistors; uniform large grain size; Annealing; Magnetic films; Magnetic resonance imaging; Radio frequency; Resistors; Sputtering; Al2O3 substrate; DC magnetron sputtering; Ni-Cr-Si; RF magnetron sputtering; thin-film resistor;
Conference_Titel :
Next-Generation Electronics (ISNE), 2014 International Symposium on
Conference_Location :
Kwei-Shan
DOI :
10.1109/ISNE.2014.6839380
