Title :
Spectral imaging in infrared microscope [semiconductor device/IC investigation]
Author :
Bailon, Michelle F. ; Soriano, Maricor ; Tarun, Alvarado B. ; Saloma, Caesar
Author_Institution :
Quality & Reliability Dept., Intel Technol. Philippines Inc., Cavite, Philippines
Abstract :
We present the 2D emission spectral imaging capability developed for the infrared emission microscope (IREM) tool. This innovative technique can provide fundamental physical information on the nature of emissions in device structures and can therefore be use for quick and accurate detection and identification of discrete elements in ICs. The emission spectrum of a device in an IC is derived from images using four different spectral band filters in the 800-1500 nm range. Singular value decomposition is utilized to calculate the spectrum of a device with respect to a proprietary spectral library. The technique is demonstrated using an IRLED and NMOS.
Keywords :
MOSFET; failure analysis; infrared imaging; infrared spectrometers; infrared spectroscopy; integrated circuit measurement; integrated circuit testing; light emitting diodes; optical microscopy; semiconductor device measurement; singular value decomposition; 2D emission spectral imaging; 800 to 1500 nm; IR emission microscope; IREM tool; IRLED; NMOS; failure analysis; imaging spectrometer; infrared microscope spectral imaging; singular value decomposition; spectral band filters; spectral library; Energy states; Failure analysis; Filters; Gratings; Infrared imaging; Infrared spectra; Libraries; Microscopy; Optical imaging; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345533
