DocumentCode :
1612138
Title :
Properties study of the heterostructure CdS — CdO
Author :
Shindov, Peter ; Kakanakov, Rumen ; Philippov, Philipp ; Anastasova, Teodora ; Kaneva, Svetlana
Author_Institution :
Tech. Univ. Sofia, Plovdiv, Bulgaria
fYear :
2008
Firstpage :
523
Lastpage :
525
Abstract :
The effect of the pulsed - laser annealing on the parameters of CdS thin layers in the medium of oxygen was studied. The CdS thin layers were deposited by spray pyrolysis and surface treatment by nanosecond pulses of XeCl - laser. The changes in the layers were characterized by SEM, XRD and XPS. The results showed that a change in the morphology of the surface occurred; a by-surface layer consisted of CdO with high transparency and conductivity is formed in consequence of oxidation of CdS. These results are discussed in the context of window layers in solar cells.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; cadmium compounds; oxidation; pyrolysis; scanning electron microscopy; semiconductor heterojunctions; semiconductor thin films; solar cells; surface morphology; surface treatment; transparency; wide band gap semiconductors; CdS-CdO; SEM; XPS; XRD; XeCl-laser; high transparency; oxidation; pulsed-laser annealing; semiconductor heterostructure; solar cells; spray pyrolysis; surface morphology; surface treatment; thin layers; Annealing; Conductivity; Optical pulses; Oxidation; Pulsed laser deposition; Spraying; Surface emitting lasers; Surface morphology; Surface treatment; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
Conference_Location :
Budapest
Print_ISBN :
978-1-4244-3972-0
Electronic_ISBN :
978-1-4244-3974-4
Type :
conf
DOI :
10.1109/ISSE.2008.5276622
Filename :
5276622
Link To Document :
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