Title :
A 150 MHz OTA in 3 macron CMOS silicon technology
Author :
Eynde, F. Op´t ; Sansen, W.
Author_Institution :
Dept. of Electrotech., Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
The authors explore the possibilities and limitations of the CMOS technology for the implementation of wideband amplifiers. Using a simplified transistor model, several amplifier configurations are compared. It is shown that minor circuit modifications can reduce the power consumption by more than a factor of two. The study results in a 150-MHz operational amplifier in 3-μm CMOS
Keywords :
CMOS integrated circuits; high-frequency amplifiers; insulated gate field effect transistors; operational amplifiers; semiconductor device models; wideband amplifiers; 0 to 150 MHz; 150 MHz; 3 micron; CMOS technology; OTA; Si; VHF amplifier; amplifier configurations; circuit modifications; limitations; operational amplifier; power consumption; transistor model; wideband amplifiers; Bipolar transistors; Broadband amplifiers; CMOS technology; Cutoff frequency; Energy consumption; MOSFETs; Operational amplifiers; Power amplifiers; Silicon; Transconductance;
Conference_Titel :
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location :
Portland, OR
DOI :
10.1109/ISCAS.1989.100298
