DocumentCode
1612249
Title
A 71-80 GHz medium power amplifier using 4-mil 0.15-µm GaAs-PHEMT technology
Author
Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2011
Firstpage
1130
Lastpage
1133
Abstract
A matching network with benefit of realization and wide bandwidth for millimeter-wave power amplifiers is proposed. With the proposed matching network, the characteristic impedance of the λ/4 transformers are increased and the length of the λ/4 transformers are reduced. A 71-80 GHz medium power power amplifier using 4-mil 0.15-μm HEMT is demonstrated based on the proper matching network. A 18.8-dBm output power with 10.7% peak PAE has been achieved and reveals that this matching is suitable for millimeter-wave power amplifier designs.
Keywords
high electron mobility transistors; power amplifiers; GaAs; PHEMT technology; frequency 71 GHz to 80 GHz; matching network; medium power amplifier; millimeter wave power amplifier; Frequency measurement; Gallium arsenide; Impedance; MMICs; Microwave circuits; Power transmission lines; Transmission line measurements; GaAs; HEMT; Power amplifier; monolithic microwave integrated circuit (MMIC);
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4577-2034-5
Type
conf
Filename
6173955
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