DocumentCode
161226
Title
Flip-chip-bonded, 8-wavelength AlGaInAs DFB laser array operable up to 70°C for silicon WDM interconnects
Author
Tanaka, Shoji ; Matsumoto, Tad ; Kurahashi, Tetsuo ; Matsuda, Manabu ; Uetake, A. ; Sekiguchi, Shigeyuki ; Tanaka, Yuichi ; Morito, Ken
Author_Institution
PETRA, Tsukuba, Japan
fYear
2014
fDate
21-25 Sept. 2014
Firstpage
1
Lastpage
3
Abstract
An 8-wavelength light source for silicon WDM transceiver was developed using an AlGaInAs DFB laser array integrated with tapered-SOA and precise flip-chip bonding technology. The device demonstrated high Si-waveguide-coupled output powers of >+2.3dBm/ch under 8-ch simultaneous operation at 70°C.
Keywords
aluminium compounds; bonding processes; flip-chip devices; gallium arsenide; indium compounds; semiconductor optical amplifiers; silicon; wavelength division multiplexing; AlGaInAs; DFB laser array; Si; flip-chip bonding technology; flip-chip-bonded 8-wavelength DFB laser array; silicon WDM interconnects; silicon WDM transceiver; silicon-waveguide-coupled output powers; tapered-SOA; temperature 70 C; wavelength light source; Arrays; Laser modes; Laser stability; Power generation; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2014 European Conference on
Conference_Location
Cannes
Type
conf
DOI
10.1109/ECOC.2014.6963970
Filename
6963970
Link To Document