• DocumentCode
    1612425
  • Title

    Copper corrosion issue and analysis on copper damascene process

  • Author

    Song, Z.G. ; Neo, S.P. ; Oh, C.K. ; Redkar, S. ; Lee, Y.P.

  • Author_Institution
    Failure Anal. Group, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
  • fYear
    2004
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    Because copper is very difficult to etch by dry etching methods, copper metallization is created with a damascene process. In this process, chemical mechanical polishing (CMP) is the key step. The wet chemical treatment in CMP makes copper corrosion one of the critical issues for copper metallization. This paper addresses the three different types of copper corrosion; namely, copper chemical corrosion, copper galvanic corrosion and photo assisted copper corrosion. The failure analyses for how to differentiate them and identify their root causes are discussed in detail.
  • Keywords
    chemical mechanical polishing; copper; corrosion; etching; failure analysis; integrated circuit interconnections; integrated circuit metallisation; CMP wet chemical treatment; Cu; chemical corrosion; chemical mechanical polishing; copper etching method; damascene process; failure analysis; galvanic corrosion; metallization; photo assisted copper corrosion; Aluminum; Chemical processes; Copper; Corrosion; Delay; Dry etching; Failure analysis; Manufacturing processes; Metallization; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
  • Print_ISBN
    0-7803-8454-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2004.1345545
  • Filename
    1345545