DocumentCode
1612425
Title
Copper corrosion issue and analysis on copper damascene process
Author
Song, Z.G. ; Neo, S.P. ; Oh, C.K. ; Redkar, S. ; Lee, Y.P.
Author_Institution
Failure Anal. Group, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear
2004
Firstpage
71
Lastpage
74
Abstract
Because copper is very difficult to etch by dry etching methods, copper metallization is created with a damascene process. In this process, chemical mechanical polishing (CMP) is the key step. The wet chemical treatment in CMP makes copper corrosion one of the critical issues for copper metallization. This paper addresses the three different types of copper corrosion; namely, copper chemical corrosion, copper galvanic corrosion and photo assisted copper corrosion. The failure analyses for how to differentiate them and identify their root causes are discussed in detail.
Keywords
chemical mechanical polishing; copper; corrosion; etching; failure analysis; integrated circuit interconnections; integrated circuit metallisation; CMP wet chemical treatment; Cu; chemical corrosion; chemical mechanical polishing; copper etching method; damascene process; failure analysis; galvanic corrosion; metallization; photo assisted copper corrosion; Aluminum; Chemical processes; Copper; Corrosion; Delay; Dry etching; Failure analysis; Manufacturing processes; Metallization; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN
0-7803-8454-7
Type
conf
DOI
10.1109/IPFA.2004.1345545
Filename
1345545
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