Design and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers

Author

Alias, M.S. ; Maskuriy, F. ; Faiz, F. ; Mitani, S.M.

fYear

2012

Firstpage

39

Lastpage

42

Abstract

The paper presented comprehensive theoretical design study and experimental fabrication of long wavelength GaInNAs edge-emitting laser diode. The theoretical results reveals that optimal GaInNAs active region and device structure are acquired, where high material gain near 1.3 μm and precise optical mode confinement are obtained. Room temperature lasing emission around 1.27 μm with low threshold current and threshold current densities are achieved in broad area GaInNAs laser diode grown by molecular beam epitaxy. The theoretical results of photoluminescence spectrum and light-current-voltage characteristic shows a very good agreement with the experimental results.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; molecular beam epitaxial growth; optical fabrication; photoluminescence; quantum well lasers; wide band gap semiconductors; GaInNAs; device structure; light-current-voltage characteristics; long wavelength edge-emitting laser diode; long-wavelength quantum well edge-emitting laser design; long-wavelength quantum well edge-emitting laser fabrication; material gain; molecular beam epitaxy; optical mode confinement; optimal active region; photoluminescence spectrum; room temperature lasing emission; temperature 293 K to 298 K; threshold current density; Diode lasers; Laser theory; Materials; Optical device fabrication; Optical refraction; Optical variables control; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Applications and Industrial Electronics (ISCAIE), 2012 IEEE Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-4673-3032-9

Type

conf

DOI

10.1109/ISCAIE.2012.6482065

Filename

6482065