Magnetic nanostructure hysteresis loop calculation for modified thin film multi-layer by ion irradiation

Author

Bajalan, D. ; Hauser, H. ; Fulmek, P.L.

Author_Institution

Inst. of Sensor & Actuator Syst., Vienna Univ. of Technol.

fYear

0

Firstpage

156

Lastpage

159

Abstract

The fluence of ion irradiation on paramagnetic, polycrystalline thin films affects both anisotropy and spontaneous magnetization M_s. The dependence of coercivity and initial susceptibility on M_s is predicted by a hysteresis model considering the balance of energy with good qualitative agreement. The calculated bit stability, determined by the anisotropy constant, may be promising for future data storage applications

Keywords

coercive force; ion beam effects; magnetic anisotropy; magnetic hysteresis; magnetic multilayers; magnetic thin films; nanostructured materials; paramagnetic materials; coercivity; ion irradiation effects; magnetic anisotropy; magnetic hysteresis modeling; magnetic nanostructure hysteresis loop calculation; magnetic thin films; modified thin film multi-layers; paramagnetic polycrystalline thin films; spontaneous magnetization; Anisotropic magnetoresistance; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic hysteresis; Magnetization; Paramagnetic materials; Perpendicular magnetic anisotropy; Predictive models; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on

Conference_Location

Wiener Neustadt

Print_ISBN

0-7803-9325-2

Type

conf

DOI

10.1109/ISSE.2005.1491018

Filename

1491018